| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device offering stable characteristics and a manufacturing method for the same. SOLUTION: The semiconductor device includes a silicon oxide film, a metal silicate insulating film which is formed on the silicon oxide film and has a dielectric constant higher than that of the silicon oxide film, and a gate electrode formed on the metal silicate insulating film. In the metal silicate insulating film, the composition ratio of a metal element in contact with the gate electrode is lower than the composition ratio of a metal element in contact with the silicon oxide film. COPYRIGHT: (C)2008,JPO&INPIT
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