| 摘要 |
PROBLEM TO BE SOLVED: To raise a threshold voltage in an n-type SOI-MOSFET without inducing a substrate floating effect, and also to prevent the deterioration of throughput in manufacturing. SOLUTION: P-type impurities for determining the conductive type of a channel region in an SOI substrate 11 and fluorine are introduced to a channel formation planned region 23. In this case, fluorine is introduced by a low-acceleration voltage, that is, it is introduced shallowly from the upper surface of the channel formation planned region. Heat treatment is performed after introducing the p-type impurities and the fluorine. COPYRIGHT: (C)2008,JPO&INPIT
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