| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric material memory cell that can prevent delamination by increasing junction strength among metal films forming an electrode of a ferroelectric material capacitor, and also to provide a method for fabrication thereof. SOLUTION: The ferroelectric material memory cell includes a transistor formed on a semiconductor substrate, an insulating film formed on the semiconductor substrate, a lower electrode electrically connected with the transistor formed on the insulating film, a capacitance insulating film formed of a ferroelectric material formed on the lower electrode, and an upper electrode formed on the capacitance insulating film. In this ferroelectric material memory cell, the lower electrode includes a first electrode layer formed of iridium oxide, a second electrode layer formed of platinum provided at the area higher than the first electrode layer, and a peel strength reinforcing means for reinforcing peel strength between the first and second electrode layers. COPYRIGHT: (C)2008,JPO&INPIT
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