发明名称 |
Fabrication of Semiconductor Devices for Light Emission |
摘要 |
A semiconductor device for light emission having a plurality of epitaxial layers with an n-type layer for light emission and a p-type layer for light reflection. The p-type layer has at least one seed layer for an outer layer of a conductive metal. The at least at least one seed layer is a material for providing a buffer for differential thermal expansion of the outer layer and the light reflecting layer.
|
申请公布号 |
US2008210969(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
US20060088849 |
申请日期 |
2006.09.01 |
申请人 |
TINGGI TECHNOLOGIES PRIVATE LIMITED |
发明人 |
YUAN SHU;KANG XUE JUN;WU DA KE |
分类号 |
H01L33/06;H01L33/10;H01L33/12;H01L33/32;H01L33/36 |
主分类号 |
H01L33/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|