METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To surely stick a semiconductor device to the surface of a glass substrate exposed by removing a base coat layer. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming a sacrificial film 31 having a higher etching rate as compared with a glass substrate 22, in a region including at least a part of a sticking region A for the glass substrate 22; a step for forming a base coat layer 32 to cover the sacrifice film 31; a step for forming an amorphous semiconductor layer 28 to cover the sacrificial film 31 entirely via the base coat layer 32; a step for forming a crystal semiconductor layer 33 by irradiating the amorphous semiconductor layer 28 with laser and crystallizing and etching the amorphous semiconductor layer 28; a step for removing the base coat layer 32 and the sacrificial film 31 in the sticking region A by etching; and a step for sticking a semiconductor device portion 53 to the sticking region A. COPYRIGHT: (C)2008,JPO&INPIT