| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency matching circuit which has impedance matching about a high frequency signal of a desired frequency band and has a high Q value. SOLUTION: The high frequency matching circuit is provided with an FET 12 for amplifying a high frequency signal, input side MEMS (Micro Electric Machine System) devices 15, 21 and 11 which respectively have a plurality of different capacity values in accordance with a plurality of different switching control voltages, and are connected to an input side of the FET 12 to have matching with input impedance of the FET 12, and output side MEMS devices 28 and 32 which respective have a plurality of different capacity values in accordance with a plurality of different switching control voltages, and are connected to an output side of the FET 12 to have matching with output impedance of the FET 12. COPYRIGHT: (C)2008,JPO&INPIT
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