ELECTROSTATIC DISCHARGE PROTECTION DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING ELECTROSTATIC DISCHARGE PROTECTION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an electrostatic discharge protection device by which fluctuation in resistance value of ballast resistance can be suppressed, to provide a semiconductor device with the same, and to provide a method for manufacturing the electrostatic discharge protection device. SOLUTION: Gate electrodes 42 are formed on a substrate 40 through gate oxide films 41. The n--type diffusion areas 44S and 44D are formed in source forming areas S and a drain forming area D respectively in the substrate 40 sandwiching the gate electrodes 42 and n+-type distribution areas 45S and 45D are formed respectively under the n--type diffusion areas 44S and 44D. A drain electrode 51 is formed on the surface of the n--type diffusion area 44D with a distance from the side walls 43 of the gate electrodes 42 by the width of a silicide block area 52. A p+-type distribution area 55 is formed directly under the drain electrode 51 and is on the underside of the n+-type distribution area 45D in the direction of the depth. COPYRIGHT: (C)2008,JPO&INPIT