| 摘要 |
PROBLEM TO BE SOLVED: To prevent reduction of a throughput by shortening the purge time. SOLUTION: A substrate processing apparatus includes a nozzle 300 for supplying a processing gas to form a desired film on a surface of the substrate. The nozzle 300 has a double pipe structure of a center pipe 320 and an outer peripheral pipe 310, the processing gas is supplied into a gap between the center pipe 320 and the outer peripheral pipe 310, and a purge gas is supplied to the center pipe 320. The outer peripheral pipe 310 has at least one gas supply hole 312 open to the substrate, and the center pipe 320 has at least two gas supply holes 322 and 324. The gas supply hole 312 is located at a position between the gas supply holes 322 and 324 in a substrate lamination direction. COPYRIGHT: (C)2008,JPO&INPIT
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