| 摘要 |
PROBLEM TO BE SOLVED: To reduce defects in a resist pattern when reducing the size of the resist pattern by using the RELACS technology. SOLUTION: A resist pattern size shrinking agent is applied on the resist pattern of a wafer W. Thereafter, the wafer W is heated to alter the property of a lower layer portion of the resist pattern size shrinking agent in contact with the surface of the resist pattern to insoluble into water. Then, an upper layer portion of the resist pattern size shrinking agent is removed by a removing liquid. In this removing process, a pure water liquid film D is formed on the wafer W in the static state, and the upper layer portion of the resist pattern size shrinking agent B is dissolved by the pure water liquid film D. Then, with the wafer W being turned, pure water E is supplied onto the wafer W to remove the upper layer portion of the resist pattern size shrinking agent off the wafer W. Then, with the wafer W being turned, a nozzle 182 for drying from which pure water E is being discharged is moved from the center of the wafer W toward the periphery to dry the wafer W. COPYRIGHT: (C)2008,JPO&INPIT
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