摘要 |
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of fabricating a material layer of a semiconductor device includes providing a workpiece, and forming a ZrO<SUB>2 </SUB>layer over the workpiece. The method includes forming at least one monoclinic crystalline phase-minimizing material layer for the ZrO<SUB>2 </SUB>layer over the workpiece.
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