| 摘要 |
The method involves selectively applying a sacrificial layer (4) e.g. silicon germanium layer, on a semiconductor substrate at a channel region. A gate electrode is formed over the sacrificial layer, and a source electrode and a drain electrode are formed in the substrate on both sides of the region. The sacrificial layer over the region under the gate electrode is removed, and a high-k-gate-dielectric layer is applied over the region. |
