| 摘要 |
<p>A semiconductor device and method for manufacturing the same are disclosed. A semiconductor device according to an embodiment comprises an interlayer insulating layer including a lower conductor wiring layer and a via hole exposing the lower conductor wiring layer, a conductor material filled inside the via hole, and an upper conductor wiring layer electrically connected to the lower conductor wiring layer through the conductor material filled inside the via hole. A barrier layer for inhibiting a loss of the conductor material filled inside the via hole is formed with a portion filling the upper portion of the via hole, and the upper conductor wiring layer is formed on the barrier layer.</p> |
