SUBSTRATE PROCESSING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and a substrate processing method capable of controlling the uniformity of the thickness of a film formed on a substrate. SOLUTION: The substrate processing method includes a step of processing a wafer 1400 by causing a cooling gas to flow to an exhaust part 1080 by means of a cooling gas exhaust device 1084 while heating a reaction tube 1014 using a heater 1052 and by controlling the heater 1052 and the cooling gas exhaust device 1084 by means of a controller 1200 based on the value of pressure at the exhaust part 1080, and a step of acquiring a measurement value of a first thermocouple 1062 that detects the temperature of the peripheral edge part of the wafer 1400 and a measurement value of a central thermocouple 1068 that detects the temperature at the center of the wafer 1400 to acquire the deviation of both measurement values, comparing the deviation stored in advance with the deviation of both measurement values before processing the wafer 1400, and correcting the value of pressure at the reaction tube 1014 when the deviation stored in advance differs from the deviation of both measurement values. COPYRIGHT: (C)2008,JPO&INPIT