| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory for detecting both errors in data of a memory and a memory address. <P>SOLUTION: In writing data in the memory cell of a memory address Addr01 in an EEPROM 7 as a memory, an error inspection circuit 8 generates an error detection code different according to the memory address Addr01 by the arithmetic operation of the data error detection code of the data and the address error code of the memory address Addr01. The error detection code is written with the data in the memory cell of the same memory address Addr01, and both errors in the data and the memory address, can be detected. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
