| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be manufactured easily as a high-reliability device, with high performance and with high integration density for circuit elements. SOLUTION: The semiconductor device 60 is constituted by forming a plurality of circuit elements 22 in a semiconductor substrate 10, laminating a first inter-layer insulating film 30 and a second inter-layer insulating film 45, in this order, so as to cover the circuit elements, and respectively connecting damascene wiring parts 53, 57 formed in the second inter-layer insulating film to the prescribed circuit elements, formed in the semiconductor substrate with the use of prescribed contact plug parts 35 formed in the first inter-layer insulating film. When the semiconductor device 60 is constituted, the plurality of damascene wiring parts include at least one first damascene wiring part 53, which is partially in contact with the upper surface and side surface upper part of the corresponding contact plug part and is electrically connected to the contact plug part. COPYRIGHT: (C)2008,JPO&INPIT
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