| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor element capable of sufficiently reducing contact resistance between a contact layer in the upper part of a ridge or mesa shape semiconductor layer and an electrode, and selecting an electrode material at a high degree of freedom, and to provide its manufacturing method. SOLUTION: The optical semiconductor element includes: the semiconductor layer 12 formed on an N-type semiconductor substrate 10n and having a ridge shape projection 14; a resin layer 26 formed on both the side surface parts of the ridge part 14, so as to embed the ridge part 14; an insulating film 30 formed on the resin layer 26 and having an opening 31 for exposing the upper surface of the ridge part 14 and the upper surfaces of both side parts of the ridge part 14 in the resin layer 26; a P-type electrode 28p formed in the opening 31 so as to cover the upper surface of the ridge part 14 and electrically connected to the upper part of the ridge part 14; and a pad electrode 32 formed on the P-type electrode 28p and the insulating film 30, and electrically connected to the P-type electrode 28p. COPYRIGHT: (C)2008,JPO&INPIT
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