发明名称 |
METHOD FOR PRODUCTION OF RARE EARTH VANADATE SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for production of a rare earth vanadate single crystal which has no crystal defect, has high quality, is large-sized platy and is suitable for use in a semiconductor laser-excited solid-state laser. SOLUTION: The platy rare earth vanadate single crystal has the shoulder parts 6 in which a crystal width is gradually widened, and is produced by using a seed crystal 4 of orientation [110] and growing the crystal toward the orientation [110] by an edge-defined film-fed crystal growth (EFG) method. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008201618(A) |
申请公布日期 |
2008.09.04 |
申请号 |
JP20070038858 |
申请日期 |
2007.02.20 |
申请人 |
COVALENT MATERIALS CORP;OXIDE CORP |
发明人 |
WATANABE SHINYA;MATSUMURA TAKASHI;NAKAMURA OSAMU;MIYAMOTO AKIO |
分类号 |
C30B29/30;C01G31/00;C30B15/34;G02B1/02 |
主分类号 |
C30B29/30 |
代理机构 |
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