| 发明名称 |
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE USING THE SAME |
| 摘要 |
A semiconductor substrate includes: an AlN layer provided on a silicon substrate; an AlGaN layer that is provided on the AlN layer and has an Al composition ratio of 0.3 to 0.6; and a GaN layer provided on the AlGaN layer.
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| 申请公布号 |
US2008210949(A1) |
申请公布日期 |
2008.09.04 |
| 申请号 |
US20070965302 |
申请日期 |
2007.12.27 |
| 申请人 |
EUDYNA DEVICES INC. |
发明人 |
MAKABE ISAO;NAKATA KEN |
| 分类号 |
H01L29/205;H01L33/32;H01L33/34 |
主分类号 |
H01L29/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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