发明名称 Semiconductor device and method of manufacturing thereof
摘要 A first conductive layer and a second conductive layer are formed on an upper surface of a semiconductor substrate. The second conductive layer formed at a higher location than the first conductive layer. An insulating film is formed over the semiconductor substrate to cover the first conductive layer and the second conductive layer. An interlayer insulator has a structure of at least two layers including a first layered film composed of an organic insulating material and a second layered film composed of an inorganic insulating material and formed on the first layered film. The interlayer insulator is formed covering the first conductive layer and the second conductive layer.
申请公布号 US2008211030(A1) 申请公布日期 2008.09.04
申请号 US20080010935 申请日期 2008.01.31
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 AKIYAMA KAZUTAKA
分类号 H01L27/088 主分类号 H01L27/088
代理机构 代理人
主权项
地址