发明名称 Method of removing silicon oxide from a surface of a substrate
摘要 A method for removing silicon oxide from a surface of a substrate is disclosed. The method includes depositing material onto the silicon oxide (110) and heating the substrate surface to a sufficient temperature to form volatile compounds including the silicon oxide and the deposited material (120). The method also includes heating the surface to a sufficient temperature to remove any remaining deposited material (130).
申请公布号 US6806202(B2) 申请公布日期 2004.10.19
申请号 US20020309500 申请日期 2002.12.03
申请人 MOTOROLA, INC. 发明人 HU XIAOMING;CRAIGO JAMES B.;DROOPAD RAVINDRANATH;EDWARDS, JR. JOHN L.;LIANG YONG;WEI YI;YU ZHIYI
分类号 H01L21/306;(IPC1-7):H01L21/461;H01L21/476 主分类号 H01L21/306
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