发明名称 |
Light emitting apparatus |
摘要 |
In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Omega.cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
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申请公布号 |
US2008210959(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
US20070727425 |
申请日期 |
2007.03.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAGAI YOUICHI;KIYAMA MAKOTO;NAKAMURA TAKAO;SAKURADA TAKASHI;AKITA KATSUSHI;UEMATSU KOJI;IKEDA AYAKO;KATAYAMA KOJI;YOSHIMOTO SUSUMU |
分类号 |
H01L29/24;H01L33/06;H01L33/12;H01L33/32;H01L33/40;H01L33/50;H01L33/54;H01L33/56;H01L33/60;H01L33/62 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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