Method for manufacturing semiconductor element, involves implanting ions of doped material with large diffusion coefficients in semiconductor and irradiating multiple pulsed laser radiation using multiple laser irradiation devices

摘要

The method involves implanting ions of a doped material with a large diffusion coefficients in a semiconductor and irradiating multiple pulsed laser radiation using multiple laser irradiation devices during activating a doped layer, in which the doped material is implanted, on a single doped layer or successive layers. The successive layers are formed from multiple doped layers with the same conductor type or with different conductor type.