| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory element and a nonvolatile semiconductor memory device, enabling both miniaturization and multiple value coding. <P>SOLUTION: The nonvolatile semiconductor memory element and nonvolatile semiconductor memory device contain a transistor 1 which comprises: a semiconductor substrate 2; a source region 4a and a drain region 4b formed apart on the semiconductor substrate; and a gate structure which has: a tunnel insulating layer 6 formed on the semiconductor substrate between the source region and the drain region; a resistance change layer 8 of a metal oxide formed on the tunnel insulating layer; and a first electrode 10 formed on the resistance change layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
