| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition used in ArF excimer laser lithography, etc., and suitable for thermal flow and a resist pattern forming method. <P>SOLUTION: The positive resist composition comprises a resin component (A) of which the solubility in an alkali developer is increased by the action of an acid and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) has a hydroxynaphthalene (meth) acrylate constitutional unit (a0) and the positive resist composition further comprises a crosslinkable polyvinyl ether compound (G). <P>COPYRIGHT: (C)2008,JPO&INPIT |
