| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress false writing in a memory cell. <P>SOLUTION: The nonvolatile semiconductor memory according to an embodiment of the present invention includes a plurality of memory cells MC and MC"1" disposed in a P well area 21 within a semiconductor substrate 20 and serially connected with each other; selection gate transistors SGD and SGS connected to one-side ends and the other ends of the plurality of memory cells MC and MC"1"; a P well control circuit which controls the P well circuit 21; a plurality of word lines connected respectively to the plurality of memory cells; a row control circuit which controls the plurality of word lines; and an operation control circuit which performs control of the P well control circuit and the row control circuit. The operation control circuit controls, when writing is performed to a memory cell selected from the plurality of memory cells, the P well control circuit to supply precharge voltage Vread to the P well circuit 21 and precharge channels of the plurality of memory cells MC and MC"1". <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
