发明名称 |
Nitride semiconductor, method for manufacturing the same and nitride semiconductor device |
摘要 |
A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.
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申请公布号 |
US6858877(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20030352256 |
申请日期 |
2003.01.28 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KAWAGUCHI YASUTOSHI;ISHIBASHI AKIHIKO;TSUJIMURA AYUMU;OTSUKA NOBUYUKI |
分类号 |
H01L21/20;H01L33/00;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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