发明名称 |
Gated fabrication of nanostructure field emission cathode material within a device |
摘要 |
Gated field emission devices and systems and methods for their fabrication are described. A method includes growing a substantially vertically aligned carbon nanostructure, the substantially vertically aligned carbon nanostructure coupled to a substrate; covering at least a portion of the substantially vertically aligned carbon nanostructure with a dielectric; forming a gate, the gate coupled to the dielectric; and releasing the substantially vertically aligned carbon nanostructure by forming an aperture in the gate and removing a portion of the dielectric.
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申请公布号 |
US6858455(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20020155841 |
申请日期 |
2002.05.24 |
申请人 |
UT-BATTELLE, LLC |
发明人 |
GUILLOM MICHAEL A.;SIMPSON MICHAEL L.;MERKULOV VLADIMIR I.;MELECHKO ANATOLI V.;LOWNDES DOUGLAS H. |
分类号 |
B81C1/00;H01J9/02;(IPC1-7):H01L21/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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