发明名称 |
Storage nodes and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the same |
摘要 |
In various embodiments, the present disclosure may provide a storage node. In various implementations, the storage node may include a bottom electrode having a non-planar bottom surface that conforms with and is connected to a non-planar top surface of a diode electrode of a memory device. The storage node may further include a phase change layer on top of a bottom diode and a top electrode on a top surface of a phase change layer.
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申请公布号 |
US2008210922(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
US20070000829 |
申请日期 |
2007.12.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE JUN-HO;KANG SUNG-KWAN;BAIK HION-SUCK;LEE JONG-WOOK |
分类号 |
H01L47/00;G11C11/00;H01L21/28 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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