| 发明名称 |
Forming Method and Forming System for Insulation Film |
| 摘要 |
A gate insulation film ( 104 ) of a MISFET ( 100 ) is constituted of a silicon oxide film ( 106 ), silicon nitride film ( 107 ), and high-permittivity film ( 108 ). The silicon oxide film ( 106 ) and silicon nitride film ( 107 ) are formed by microwave plasma processing with a radial line slot antenna.
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| 申请公布号 |
US2008214017(A1) |
申请公布日期 |
2008.09.04 |
| 申请号 |
US20070967517 |
申请日期 |
2007.12.31 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MURAKAWA SHIGEMI;KUMAI TOSHIKAZU;NAKANISHI TOSHIO |
| 分类号 |
H01L21/31;H01L29/78;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/318;H01L29/51 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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