发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE SUBJECTED TO HEAT TREATMENT BY USE OF OPTICAL HEATING APPARATUS
摘要 An auxiliary heating process is performed to set the temperature of the outer peripheral portion of a semiconductor substrate higher than that of the central portion thereof by use of an auxiliary heating source which supplementally heats a region of an area smaller than the area of the main surface of the semiconductor substrate from the rear surface of the main surface thereof, pulse-like flash lamp light or laser light is applied in the auxiliary heated state and the heat treatment is performed by use of the applied energy. The flash lamp light is applied to the main surface of the semiconductor substrate in a pulse form of 0.1 ms to 100 ms.
申请公布号 US2008214020(A1) 申请公布日期 2008.09.04
申请号 US20080025916 申请日期 2008.02.05
申请人 ITO TAKAYUKI;SUGURO KYOICHI 发明人 ITO TAKAYUKI;SUGURO KYOICHI
分类号 H01L21/324 主分类号 H01L21/324
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