| 摘要 |
A substrate processing apparatus for drying a substrate including a chamber, a vapor supply part, an open/close valve, and a controller, is disclosed. While the chamber is hermetically sealed, a substrate is cleaned by pure water. Water vapor of high temperature and pressure is thereafter supplied from the vapor supply part, to raise the temperature and pressure in the chamber. When the substrate surface is covered with pure water at a temperature of 100 degrees centigrade or higher, the controller brings the open/close valve to an open state to release the ambient atmosphere in the chamber in the atmosphere outside, thereby instantaneously bringing the chamber to a condition of reduced pressure. As a result, water mark formation caused by processing solution adhering to the substrate is suppressed in the drying process.
|
