| 摘要 |
<p>A multi-gate field effect transistor power switch is provided to insulate selectively a CMOS circuit from a power supply unit or to release a connecting state of the CMOS circuit from the power supply unit. A circuit includes multiple sub-circuits supported by a substrate. The circuit further includes multiple multi-gate field effect transistor power switches for coupling selectively and electrically the multiple sub-circuits with different voltages. In the circuit, p-type multi-gate field effect transistor power switches(115) are used for coupling the selected sub-circuits with a first voltage, and n-type multi-gate field effect transistor power switches are used for coupling the selected sub-circuits with a second voltage.</p> |
