发明名称 RF SHUTTER
摘要 <p>The present invention generally comprises an RF shutter assembly for use in a plasma processing apparatus. The RF shutter assembly may reduce the amount of plasma creep below the substrate and shadow frame during processing, thereby reducing the amount of deposition that occurs on undesired surfaces. By reducing the amount of deposition on undesired surfaces, particle flaking and thus, substrate contamination may be reduced.</p>
申请公布号 WO2008106632(A2) 申请公布日期 2008.09.04
申请号 WO2008US55438 申请日期 2008.02.29
申请人 APPLIED MATERIALS, INC.;TINER, ROBIN, L.;FURUTA, GAKU;ADACHI, YUKINOBU 发明人 TINER, ROBIN, L.;FURUTA, GAKU;ADACHI, YUKINOBU
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
主权项
地址