SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a low on-resistance (Ron×A) in a lateral MOSFET formed in a p-well region of an n-type semiconductor layer. SOLUTION: Between an n-offset region 9 and an n+-source region 4, a surface exposed part of an n-well region 2 separated from a p-well region 3 is prepared, and a gate electrode 7 is formed on the surface from the n-offset region 9 to the n+-source region 4. In this case, both the n-offset 9 and the n-well region 2 can be made into current passages. COPYRIGHT: (C)2008,JPO&INPIT