SEMICONDUCTOR LASER, SEMICONDUCTOR LASER MODULE AND RAMAN AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of emitting a laser light beam having a plurality of wavelength components without necessitating alteration of a lattice width of a diffraction grating. SOLUTION: Above a semiconductor substrate, there formed is a stripe-shaped active layer 24 over a range from a reflection end surface to an outgoing end surface. The active layer 24 is curved on the way from the reflection end surface toward the outgoing end surface, so that the optical axis line of the light guided in the active layer 24 is directed in an inclined direction with respect to the normal direction of the outgoing end surface in the position of the outgoing end surface. A diffraction grating 21 is formed below the curved portion of the active layer 24. COPYRIGHT: (C)2008,JPO&INPIT