| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, consisting of a group-III nitride semiconductor which forms an n-type or a p-type region only in the bottom of a trench groove. SOLUTION: A mask 2 is formed on the surface of an n-GaN layer, and a trench groove 3 is formed by using ICP etching (Fig. 1b). Then, ion implantation of Mg is executed, by subjecting the mask 2, as it is, to heat treatment, thereby forming a p-type region 4 on the side and bottom of the trench groove 3 (Fig. 1c). Next, only the p-type region 4b of the side portion of the trench groove 3 is selectively etched by using a TMAH (tetramethylammonium hydroxide) solution (Fig. 1d). According to these steps, the p-type region 4a can be formed at the bottom of the trench groove 3 self-aligned with respect to the trench groove 3. COPYRIGHT: (C)2008,JPO&INPIT
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