| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing moisture absorption to an insulating layer and the adverse effects on a wiring layer and on a via of moisture, passing through the insulating layer and thereby suppressing some or all of the problems, such as increase in dielectric constant, corrosion of a wiring metal, oozing of the wiring metal into an insulating film and increase in the leakage current. SOLUTION: The semiconductor device includes a structure comprising laminating a nitrogen-containing composition comprising azotizing an insulating composition, a fluorine-containing composition and a conductor, in this order, in a groove, a hole or both of the groove and the hole on the insulating composition. COPYRIGHT: (C)2008,JPO&INPIT
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