| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a contact plug which is formed through a self-alignment process and can suppress decrease of a width, and a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device comprises: a semiconductor substrate 11; a transistor 20 for which diffusion layers 21 to be a source and a drain are respective formed on the semiconductor substrate 11; a ferroelectric capacitor 30 provided with a lower electrode 32, a ferroelectric film 33 and an upper electrode 34 in the order, for which the lower electrode 32 is connected to one diffusion layer 21 and the upper electrode 34 is connected to a wiring part 55; a sidewall 41 disposed on the side face continued from the upper surface to the lower surface of the ferroelectric capacitor 30, whose lower end is positioned more on the upper surface side than the lower surface; and a third contact plug 51 in contact with the sidewall 41, whose one end is connected to the other diffusion layer 21 and other end is connected to the wiring part 55 respectively. COPYRIGHT: (C)2008,JPO&INPIT
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