发明名称 Semiconductor memory device with fail-bit storage unit and method for parallel bit testing
摘要 There are provided a semiconductor memory device and a method for testing the same, in which when a plurality of semiconductor memory devices are under test, tester equipment can detect which one of the semiconductor memory devices fails without a separate fail memory. The semiconductor memory device with a memory cell array includes a comparing circuit configured to compare data read after having been written for parallel bit testing with each other and outputting comparison result data; and a storage and output unit configured to latch, as pass/fail data, the comparison result data output from the comparing circuit, simultaneously output the latched comparison result data via a plurality of outputs when an enable signal is activated, and simultaneously output independently applied parallel bit test comparison data via the plurality of outputs when the enable signal is not activated.
申请公布号 US2008215939(A1) 申请公布日期 2008.09.04
申请号 US20080068283 申请日期 2008.02.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN JI-HYUN;HEO NAK-WON
分类号 G11C29/10;G06F11/26 主分类号 G11C29/10
代理机构 代理人
主权项
地址