发明名称 |
LAYER SYSTEM COMPRISING A SILICON LAYER AND A PASSIVATION LAYER, METHOD FOR PRODUCING A PASSIVATION LAYER ON A SILICON LAYER AND THE USE OF SAID SYSTEM AND METHOD |
摘要 |
The invention relates to a layer system comprising a silicon layer (11), at least some sections of whose surface are provided with a passivation layer (17), the latter (17) consisting of a first, at least predominantly inorganic sub-layer (14) and a second sub- layer (15). The latter (15) is composed of an organic compound comprising silicon or a similar material. The second sub-layer (15) in particular takes the form of a self-assembled monolayer. The invention also relates to a method for producing a passivation layer (17) on a silicon layer (11), whereby a first inorganic sub-layer (14) is produced on said layer (11) and a second sub-layer (15), containing an organic compound containing silicon or consisting of said compound, is produced on at least some sections of the first sub-layer (14), whereby the sub-layers form the passivation layer (17). The inventive layer system or the inventive method are particularly suitable for producing cantilever structures in silicon.
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申请公布号 |
KR20050044905(A) |
申请公布日期 |
2005.05.13 |
申请号 |
KR20057002703 |
申请日期 |
2005.02.17 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
BERNHARD, WINFRIED;LAERMER, FRANZ;MUELLER, LUTZ |
分类号 |
B81C1/00;H01L21/312;H01L21/316;(IPC1-7):H01L21/302;H01L21/31 |
主分类号 |
B81C1/00 |
代理机构 |
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