| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem wherein an electron microscope image of satisfactory S/N ratio is difficult to be acquired in a material with low durability against irradiation of an electron beam, and a problem wherein a measuring error with respect to an absolute value and sensitivity are get low, and wherein quality of three-dimensional shape information gets worse, although measurement stability is enhanced when executing conventional image smoothing processing. SOLUTION: The measurement stability, precision and sensitivity are enhanced compatibly by executing image averaging processing not worsening the three-dimensional shape information in a signal waveform, while taking a dimension dispersion of a measuring objective pattern into consideration. The present invention can measure a precise pattern dimension and shape, and can control highly sensitively a semiconductor manufacturing process using the measurement. COPYRIGHT: (C)2008,JPO&INPIT |
