| 摘要 |
PROBLEM TO BE SOLVED: To provide an inverter circuit that enables a formed area to be small. SOLUTION: This complementary MOS type inverter circuit is formed of a p-channel MOS transistor 1 and an n-channel MOS transistor 2 wherein as a gate length L and a gate width W that are minimum dimensions of a gate electrode manufacturable by a manufacturing process, the p-channel MOS transistor 1 is formed in each p-type region 15, 16, 45 and 46 with the gate length L and a gate width of 1.5W or smaller while the n-channel MOS transistor 2 is formed in each n-type region 17, 18, 47 and 48 with a gate length of 1.5L or longer and the gate width W. COPYRIGHT: (C)2008,JPO&INPIT
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