SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that includes a gate insulating film ensuring high quality even if it is formed in a fine structure and assures higher reliability and high-speed operation. SOLUTION: The semiconductor device includes a p-type MISFET including a p-type active region 1003 and an n-type active region 1004 formed within a semiconductor substrate 1001, a gate insulating film 1006 formed on the upper surface of the p-type active region 1003, and a first gate electrode including a first electrode forming film 1015 having the concentration of La at the upper part thereof higher than that of La at the other part. Moreover, the semiconductor device also includes an n-type MISFET including a gate insulating film 1006 formed on the upper surface of the n-type active region 1004 and a second gate electrode including a second electrode forming film 1014 having the concentration of Al at the upper part thereof higher than that of Al at the other part. COPYRIGHT: (C)2008,JPO&INPIT