| 摘要 |
PROBLEM TO BE SOLVED: To provide nonvolatile memory devices and methods of forming the same, which can prevent electrical short circuits between bit line contacts and the upper portion of gate patterns. SOLUTION: The method has a step of forming an element isolation film on a semiconductor substrate, a step of forming a gate pattern of a non-volatile memory cell transistor including a floating gate electrode and a control gate line that extends on the floating gate electrode and on the element isolation film, on the semiconductor substrate, a step of covering at least a first portion of a first sidewall of the gate pattern using a mask pattern, to expose upper corners of the control gate line, and a step of selectively etching the element isolation film at a first etching rate using the mask pattern as an etching mask, to define an at least partial opening within the element isolation film, during this etching step, to etch back the upper corners of the control gate line at a second etching rate less than the first etching rate. COPYRIGHT: (C)2008,JPO&INPIT
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