发明名称 DIAMOND THIN FILM FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a technique for coating a die with ultrananocrystal diamond (UNCD) film. SOLUTION: Trigger discharge is generated between a cathode electrode 142 composed of graphite and a trigger electrode 144, arc discharge is induced between an anode electrode 141 and the cathode electrode 142 and the ions of carbon vapor are released into a vacuum tank 10. The inside of the vacuum tank 10 is made into a hydrogen gas atmosphere, and the carbon vapor having charges is made to reach a die 20. When an intermediate layer 21 composed of an SiC film is formed on the surface of the die 20, ultrananocrystal diamond (UNCD) grows. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008202073(A) 申请公布日期 2008.09.04
申请号 JP20070037361 申请日期 2007.02.19
申请人 KYUSHU UNIV;ULVAC JAPAN LTD 发明人 YOSHITAKE TAKESHI;NAGAYAMA KUNIHITO;AGAWA YOSHIAKI;MATSUURA MASAMICHI;YAMAGUCHI KOICHI
分类号 C23C14/06;C03B11/00 主分类号 C23C14/06
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