发明名称 |
Pattern correcting method of mask for manufacturing a semiconductor device |
摘要 |
A method of correcting a mask pattern for manufacturing a semiconductor device is disclosed. The method includes extracting a corner portion of a transistor portion. A distance from the corner portion to a line portion is extracted. A distance where the line portion does not overlap a rounding of the corner portion generated after a wafer process is obtained. A correction rule is made for a correction whether the corner portion is notched or not from the obtained distance. A corresponding relationship between the distance and an intersection part is obtained and a correction is made based on the correction rule to the corner portion.
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申请公布号 |
US2008212869(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
US20070987654 |
申请日期 |
2007.12.03 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YOSHIKAWA KEI;USUI SATOSHI;HASHIMOTO KOJI |
分类号 |
G06K9/00;H01L21/027;G03F1/36;G03F1/72;G06F17/50 |
主分类号 |
G06K9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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