CAPACITOR-LESS FLOATING-BODY VOLATILE MEMORY CELL COMPRISING A PASS TRANSISTOR AND A VERTICAL READ/WRITE ENABLE TRANSISTOR AND MANUFACTURING AND PROGRAMMING METHODS THEREOF

摘要

A capacitor-less floating-body memory cell, memory device, system and process of forming the capacitor-less memory cell includes forming the memory cell (82) in a active area of a substantially physically isolated portion of the bulk semiconductor substrate (10). A pass transistor (70) is formed on the active area for coupling with a word line (88). The capacitor-less memory cell further includes a read/write enable transistor (76) vertically configurated along at least one vertical side of the active area, sharing a floating source/drain region (80) with the pass transistor, and operable during a reading of a logic state with the logic state being stored as charge in a floating body area of the active area, causing different determinable threshold voltages for the pass transistor.