发明名称 PRODUCTION METHOD FOR HIGH-PURITY SILICON
摘要 PROBLEM TO BE SOLVED: To provide a high-purity silicon production method which, in producing a high-purity Si from SiO, reduces impurities in produced Si to a level required by Si for a solar cell substrate, simply at a low cost. SOLUTION: The method produces silicon from silicon monoxide by a disproportionation reaction. By melting the silicon produced by the disproportionation reaction and keeping the melt under a reduced pressure, low-boiling impurities in the silicon are removed, yielding high-purity silicon. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005206440(A) 申请公布日期 2005.08.04
申请号 JP20040016996 申请日期 2004.01.26
申请人 NIPPON STEEL CORP 发明人 ITO NOBUAKI;TOKUMARU SHINJI;KONDO JIRO;OKAJIMA MASAKI
分类号 C01B33/035;C01B33/037;(IPC1-7):C01B33/035 主分类号 C01B33/035
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