| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve conversion efficiency while preventing the occurrence of a dark current and white spots in response to fine pixels in a MOS-type image sensor. <P>SOLUTION: A solid-state imaging apparatus is the apparatus with an array of pixels respectively including: a photoelectric conversion element 22; and a reading transistor Tr1 for reading charges, obtained by photoelectric conversion in the photoelectric conversion element, to a floating diffusion part 25. Each element isolation region contacting the floating diffusion part 25 is formed of a shallow trench element isolation region 36 and the other element isolation region is formed of a diffusion element isolation region 37. <P>COPYRIGHT: (C)2008,JPO&INPIT |
