| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve performance of a semiconductor device by using such reflective mask as having both on-wafer transfer image contrast and reflectivity contrast, with degradation in contrast of the on-wafer transfer image suppressed. <P>SOLUTION: An exposure mask 1 is used for manufacturing a semiconductor device, using extreme ultraviolet ray. There are provided an absorption mask 13 for absorbing extreme ultraviolet ray and a mask blanks 12 having the function for reflecting the extreme ultraviolet ray. The thickness of the absorption film 13 is determined so that the optical image contrast which is transferred on a wafer using the exposure mask 1 comes to be maximum. <P>COPYRIGHT: (C)2008,JPO&INPIT |
